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| SOT23 SILICON PLANAR DUAL SCHOTTKY BARRIER DIODES ISSUE 3 - JULY 1995 1 7 1 BAS70-04 BAS70-05 BAS70-06 1 . 1 3 2 3 2 2 3 2 3 SOT23 SERIES PAIR Device Type: BAS70-04 Partmarking Detail: 2Z COMMON CATHODE Device Type: BAS70-05 Partmarking Detail: 2Z5 COMMON ANODE Device Type: BAS70-06 Partmarking Detail: 1Z ABSOLUTE MAXIMUM RATINGS. PARAMETER Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL Ptot Tj:Tstg VALUE 330 -55 to +150 UNIT mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Breakdown Voltage Reverse Leakage Current Forward Voltage Forward Current Capacitance Effective Minority Lifetime (1) (1) Sample Test For typical characteristics graphs see ZC2800E datasheet. SYMBOL VBR IR VF IF CT MIN. 70 MAX. UNIT V CONDITIONS. IR=10A VR=50V IF=1mA VF=1V f=1MHz, VR=0 f=54MHz, Ipk= 20mA (Krakauer Test Method) 200 410 15 2.0 100 nA mV mA pF ps 3-3 |
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